IRF150P220AKMA1 vs IRFZ34NPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF150P220AKMA1 tarafından Infineon ve IRFZ34NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF150P220AKMA1 IRFZ34NPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRF150P220AKMA1 —
Technology StrongIRFET HEXFET (Planar DMOS, 5th generation)
Transistor Türü N-Channel MOSFET —
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W —
Power Dissipation (Pd) at Ta=25C 3.8 W —
İşletim Sıcaklığı Aralığı -55C to +175C -55 C to +175 C
Paket TO-247-3 (PG-TO247-3) TO-220AB (3-pin + tab, through-hole)
Montaj Türü Through Hole Through Hole
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
RoHS Durumu Compliant Compliant
Lead-Free Yes —
Part Status — Active
FET Type — N-Channel, Enhancement Mode
Drain-Source Voltage (V_DSS) — 55 V
Continuous Drain Current (I_D) at Tc=25C — 29 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (P_D) at Tc=25C — 68 W
On-Resistance R_DS(on) max at V_GS=10V — 40 mOhm
Gate Charge (Q_g) typ — 22.7 nC
Gate Threshold Voltage V_GS(th) typ — [DATA_NEEDED: gate threshold voltage]
Input Capacitance (C_iss) typ — [DATA_NEEDED: input capacitance]
Maximum Junction Temperature — 175 C
Lead-Free Status — Yes (Pb-free, RoHS compliant)
Qualification — JEDEC standard
Configuration — Single N-Channel, 3-pin (3+tab)

Dökümanlar & Kaynaklar

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