IRF3205ZSTRLPBF vs IRF1010ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF3205ZSTRLPBF disebabkan oleh Infineon dan IRF1010ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF3205ZSTRLPBF IRF1010ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET (IR MOSFET) —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 110 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=10V 6.5 mOhm —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Total Gate Charge (Qg) 76 nC 63 nC (typ, per Mouser listing)
Power Dissipation (PD) at Tc=25C 170 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263) TO-220AB (3-pin + tab), Through Hole
Jenis Pemasangan Surface Mount Through Hole
Packaging Tape & Reel (left reel) —
Status RoHS Compliant Compliant (PBF = Pb-free)
Aras MSL 1 —
Body Diode Avalanche-rated intrinsic —
Polarity — N-Channel
Drain-Source Voltage (Vdss) — 55 V
Continuous Drain Current (Id) at Tc — 75 A (Tc=25C)
Power Dissipation (Pd) at Tc — 140 W (Tc=25C)
On-Resistance (Rds on) Max — [DATA_NEEDED: Rds(on) max at 10V] (typ approx. 7.5 mOhm per Mouser listing)
MOSFET Operating Mode — Enhancement
Configuration — Single MOSFET
Maximum Junction Temperature — 175 C
Qualification — JEDEC industry standard qualification
Avalanche Rating — Improved repetitive avalanche rated
Lead Status — Lead Free
Gate Threshold Voltage (Vgs th) — [DATA_NEEDED: gate threshold voltage range]

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