IRF5305STRRPBF vs IRF5305STRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF5305STRRPBF disebabkan oleh Infineon dan IRF5305STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF5305STRRPBF IRF5305STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor P-Channel MOSFET —
Technology HEXFET (Advanced Process) HEXFET (fifth generation), IR MOSFET
Drain-to-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max ±20 V —
RDS(on) max @ VGS=-10V 60 mOhm —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Power Dissipation (TC) 110 W —
Power Dissipation (TA) 3.8 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263) Surface Mount TO-263 / D2PAK (surface mount)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (Pb-free suffix) Yes (Pb-free suffix PBF)
Packaging Tape & Reel (TR) Tape & Reel (TR), 800 pcs per reel
Polarity P-Channel —
Polarity / Channel Type — P-Channel
Drain-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC=25C — -31 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C]
RDS(on) max at VGS=-10V — 60 mOhm
RDS(on) max at VGS=-4.5V — [DATA_NEEDED: RDS(on) at VGS=-4.5V]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) typ]
Total Gate Charge (Qg) — 42 nC (Mouser listing) / 63 nC (Future Electronics listing)
Maximum Power Dissition at Tc — 110 W
Maximum Power Dissipation at TA — 3.8 W
Gambaran Suhu Operasi — [DATA_NEEDED: Tj max / operating range]

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