IRF540NSTRLPBF vs IRF530NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF540NSTRLPBF disebabkan oleh Infineon dan IRF530NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF540NSTRLPBF | IRF530NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (Planar Stripe Cell) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | 70 W |
| Gambaran Suhu Operasi | -55 C to +175 C | -55C to +175C |
| Kemasan | D2PAK (TO-263), surface mount | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (13-inch reel) | — |
| Status RoHS | Compliant (Pb-free) | — |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 90 mOhm |
| Total Gate Charge (Qg) | — | 24.7 nC |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Package Type | — | D2PAK (TO-263), 3-pin (2 + tab) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant |
| Qualification Market | — | Industrial |