IRF540NSTRLPBF vs IRF530NSTRLPBF 比較
詳細並排比較 IRF540NSTRLPBF 由 Infineon 與 IRF530NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF540NSTRLPBF | IRF530NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | HEXFET (Planar Stripe Cell) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | 70 W |
| 工作溫度範圍 | -55 C to +175 C | -55C to +175C |
| 封裝 | D2PAK (TO-263), surface mount | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (13-inch reel) | — |
| RoHS 狀態 | Compliant (Pb-free) | — |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| Polarity | — | N-Channel |
| MOSFET Operating Mode | — | Enhancement |
| Drain-Source Breakdown Voltage (V(BR)DSS) | — | 100 V |
| Continuous Drain Current (ID) at Tc=25C | — | 17 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 90 mOhm |
| Total Gate Charge (Qg) | — | 24.7 nC |
| Power Dissipation (Pd) at Ta=25C | — | 3.8 W |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Package Type | — | D2PAK (TO-263), 3-pin (2 + tab) |
| Lead-Free / RoHS Status | — | Lead-Free / RoHS Compliant |
| Qualification Market | — | Industrial |