IRF540NSTRLPBF vs IRF540 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF540NSTRLPBF disebabkan oleh Infineon dan IRF540 disebabkan oleh STMicroelectronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF540NSTRLPBF | IRF540 |
|---|---|---|
| Merek | Infineon | STMicroelectronics |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | Avalanche-rugged power MOSFET |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 33 A | — |
| Pulsed Drain Current (Idm) | 110 A (per datasheet pulse curve) | — |
| On-Resistance Rds(on) max at Vgs=10V | 44 mOhm | — |
| Gate Threshold Voltage Vgs(th) | 2.0 V to 4.0 V | — |
| Total Gate Charge Qg | 47.3 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 130 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | D2PAK (TO-263), surface mount | TO-220 (through hole) |
| Jenis Pemasangan | Surface Mount | Through Hole |
| Packaging | Tape & Reel (13-inch reel) | — |
| Status RoHS | Compliant (Pb-free) | unknown |
| Avalanche Energy Rated | Yes (HEXFET ruggedized) | — |
| FET Type | — | N-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (VDSS) | — | 100 V |
| Continuous Drain Current (ID) | — | 22 A (Tc) |
| Power Dissipation (PD) | — | 85 W (Tc) |
| RDS(on) Typical | — | 0.050 Ohm |
| RDS(on) Maximum at 10 V Gate Drive | — | 77 mOhm (family typ.) |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Total Gate Charge] |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Avalanche Rating | — | Repetitive avalanche rated, 100% avalanche tested, data at 100C |
| Configuration | — | Single |
| Gate Drive Recommendation | — | 10 V for full enhancement |