IRF7105TRPBF vs FDS6575 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7105TRPBF disebabkan oleh Infineon dan FDS6575 disebabkan oleh onsemi. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7105TRPBF FDS6575
Merek Infineon onsemi
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Series IRF7105 (HEXFET Fifth Generation) —
Polarity / Configuration N-Channel + P-Channel, dual MOSFET in one package —
Drain-to-Source Voltage (Vds) 25 V —
Continuous Drain Current - N-channel (Id, N-ch) 3.5 A —
Continuous Drain Current - P-channel (Id, P-ch) 2.3 A —
Rds(on) Maximum 100 mOhm —
Technology HEXFET (IR MOSFET, fifth generation) PowerTrench (rugged gate)
Kemasan 8-SO (SOIC-8) SOIC-8 (SO-8)
Total Package Power Dissipation (Pd) 2 W —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: junction temperature range] [DATA_NEEDED: operating temperature range]
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] —
Packaging Form Tape & Reel (TR) —
Lead-Free / RoHS Status Pb-free (PBF suffix), RoHS compliant —
Kiraan Pin 8 —
Polarity — P-Channel
Drain-Source Voltage (VDS) — -20 V
Continuous Drain Current (ID) — -10 A
On-Resistance (RDS(on)) — 13 mOhm max at VGS = -4.5 V
Gate Drive Voltage Range — 2.5 V to 8 V
Tegangan Had Kepasaran — [DATA_NEEDED: gate threshold voltage range]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
Power Dissipation — [DATA_NEEDED: power dissipation at TA]
Configuration — Single MOSFET
Gate Source Voltage (VGS) Range — [DATA_NEEDED: VGS max rating]
Status RoHS — Compliant

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