IRF7205TRPBF vs IRFR5505TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7205TRPBF disebabkan oleh Infineon dan IRFR5505TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7205TRPBF | IRFR5505TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel MOSFET | — |
| Technology | IR HEXFET (4th generation) | IR MOSFET™ (HEXFET® generation 5) |
| Drain-to-Source Voltage (VDS) | -30 V | — |
| Continuous Drain Current (ID) at TA=25°C | -4.6 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=-10V | 70 mΩ | — |
| On-Resistance RDS(on) max @ VGS=-4.5V | 130 mΩ | — |
| Gate Threshold Voltage VGS(th) | -1.0 V to -3.0 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Pembuangan Kuasa (TC=25°C) | 2.5 W | — |
| Suhu Hubungan Operasi | -55 °C to +150 °C | — |
| Kemasan | SO-8 (8-SO) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| RoHS / Lead-Free | Lead-Free (PBF suffix), RoHS compliant | — |
| Packaging | Tape & Reel (TR suffix) | — |
| Polarity | — | P-Channel |
| MOSFET Operating Mode | — | Enhancement |
| VDS (Drain-Source Voltage) | — | -55 V |
| VGS (Gate-Source Voltage) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) | — | -18 A (Tc) |
| On-Resistance RDS(on) max | — | 110 mOhm (VGS = -10 V) |
| Total Gate Charge (Qg) | — | 21.3 nC |
| Power Dissipation (PD) | — | 57 W (Tc = 25 °C) |
| Gambaran Suhu Operasi | — | -55 °C to +175 °C |
| Thermal Resistance Junction-to-Case (RθJC) | — | [DATA_NEEDED: RθJC] |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Aras MSL | — | 1 |