IRF7313TRPBF vs IRF7342PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7313TRPBF disebabkan oleh Infineon dan IRF7342PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7313TRPBF IRF7342PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies
Part Number IRF7313TRPBF IRF7342PBF
Technology IR MOSFET Generation V (HEXFET Fifth Generation) HEXFET (Gen V) - P-Channel MOSFET Array
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) —
Gambaran Suhu Operasi -55C to +150C (junction) [DATA_NEEDED: operating temperature range]
Kemasan 8-pin SOIC (SO-8) surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
Aras MSL 1 —
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Original Mfr — International Rectifier (now Infineon)
Configuration — Dual P-Channel (2 independent MOSFETs)
Drain-Source Voltage V(DSS) — -55 V
Continuous Drain Current I(D) — 3.4 A
On-Resistance R(DS(on)) — 0.105 ohm
Power Dissipation P(D) — 2 W
Kemasan / Case — 8-SOIC (SO-8)
Gate Threshold Vgs(th) — [DATA_NEEDED: Vgs(th)]
Switching Frequency Optimization — < 100 kHz
Status RoHS — Compliant
Halogen Status — Halogen-Free
Qualification — JEDEC standard

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