IRF7313TRPBF vs IRF7342PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7313TRPBF sa pamamagitan ng Infineon at IRF7342PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRF7342PBF - 55V Dual P-Channel HEXFET MOSFET, 3.4A, SO-8 | Infineon
IRF7342PBF ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRF7313TRPBF | IRF7342PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRF7313TRPBF | IRF7342PBF |
| Technology | IR MOSFET Generation V (HEXFET Fifth Generation) | HEXFET (Gen V) - P-Channel MOSFET Array |
| Transistor Configuration | Dual N-Channel (Independent) | — |
| Drain-Source Voltage (VDS) max | 30 V | — |
| Continuous Drain Current (ID) max | 6.5 A per channel | — |
| On-Resistance (RDS(on)) max | 29 mOhm at VGS=10V | — |
| Power Dissipation (PD) max | 2 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: ±V rating] | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.5 V (typical range) | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | [DATA_NEEDED: operating temperature range] |
| Packhaging | 8-pin SOIC (SO-8) surface mount | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Lead-Free / Pbf | Yes (lead-free plating) | — |
| Avalanche Rated | Yes | — |
| Level ng MSL | 1 | — |
| Qualification Standard | Consumer market (per IR datasheet) | — |
| Shipping Media | Tape & Reel (TRPBF suffix) | — |
| Original Mfr | — | International Rectifier (now Infineon) |
| Configuration | — | Dual P-Channel (2 independent MOSFETs) |
| Drain-Source Voltage V(DSS) | — | -55 V |
| Continuous Drain Current I(D) | — | 3.4 A |
| On-Resistance R(DS(on)) | — | 0.105 ohm |
| Power Dissipation P(D) | — | 2 W |
| Packhaging / Kaso | — | 8-SOIC (SO-8) |
| Gate Threshold Vgs(th) | — | [DATA_NEEDED: Vgs(th)] |
| Switching Frequency Optimization | — | < 100 kHz |
| Tindminan RoHS | — | Compliant |
| Halogen Status | — | Halogen-Free |
| Qualification | — | JEDEC standard |