IRF7342TRPBF vs IRFR9024NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7342TRPBF disebabkan oleh Infineon dan IRFR9024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7342TRPBF IRFR9024NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $0.17
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel HEXFET (Gen 5)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
Gambaran Suhu Operasi -55 C to +150 C (Tj) —
Kemasan 8-SOIC (SO-8), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Polarity — P-Channel
VDS (Drain-Source Voltage) — -55 V
Continuous Drain Current (Tc=25C) — -11 A
Arus Alir Gesa — [DATA_NEEDED: pulsed drain current]
VGS (Gate-Source Voltage) — ±20 V
VGS(th) (Threshold Voltage) — [DATA_NEEDED: VGS(th) typical]
RDS(on) Max at VGS=-10V — 175 mOhm
Total Gate Charge (Qg) — 12.7 nC
Maximum Power Dissipation (Tc=25C) — 38 W
Suhu Hubungan Operasi — -55C to +175C
Kiraan Pin — 3
Status RoHS — Compliant

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