IRF7342TRPBF vs IRFR9024NTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7342TRPBF sa pamamagitan ng Infineon at IRFR9024NTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF7342TRPBF | IRFR9024NTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $0.17 |
| Part Number | IRF7342TRPBF | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Technology | HEXFET Power MOSFET (Fifth Generation), P-Channel | HEXFET (Gen 5) |
| Configuration | Dual P-Channel MOSFET Array (two independent P-FETs in one package) | — |
| Drain-Source Voltage (Vds) | -55 V | — |
| Continuous Drain Current (Id) | -3.4 A at 25 C | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current] | — |
| Gate Threshold Voltage (Vgs(th)) | -1.0 V to -3.0 V (typ -1.7 V) | — |
| Drain-Source On-Resistance (RDS(on)) | 0.105 ohm max at VGS = -10 V | — |
| Maximum Power Dissumption (Pd) | 2 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C (Tj) | — |
| Packhaging | 8-SOIC (SO-8), surface mount | TO-252AA (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packaging | Tape and Reel (TR) | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free, RoHS compliant) | — |
| Channel Type | P-Channel (enhancement mode) | — |
| Number of Channels | 2 (dual array) | — |
| Polarity | — | P-Channel |
| VDS (Drain-Source Voltage) | — | -55 V |
| Continuous Drain Current (Tc=25C) | — | -11 A |
| Pulsed Drain Kuru-kuryente | — | [DATA_NEEDED: pulsed drain current] |
| VGS (Gate-Source Voltage) | — | ±20 V |
| VGS(th) (Threshold Voltage) | — | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) Max at VGS=-10V | — | 175 mOhm |
| Total Gate Charge (Qg) | — | 12.7 nC |
| Maximum Power Dissipation (Tc=25C) | — | 38 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Bilang ng Pin | — | 3 |
| Tindminan RoHS | — | Compliant |