IRF7351TRPBF vs IRF7343TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7351TRPBF disebabkan oleh Infineon dan IRF7343TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7351TRPBF IRF7343TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7351TRPBF —
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A —
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W 2 W
Technology IR MOSFET (HEXFET trench) IR MOSFET (HEXFET Generation V)
Kemasan 8-SO (SO-8 / SOIC-8) Surface Mount 8-SOIC (SO-8)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
Status RoHS Compliant (PBF suffix = lead-free) —
Lead-Free Yes Yes
Aras MSL [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Part Status — Active
Jenis Transistor — N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel — 55 V
Drain-to-Source Voltage (VDS) - P-Channel — 55 V
Continuous Drain Current (ID) - N-Channel — 4.7 A
Continuous Drain Current (ID) - P-Channel — 3.4 A
On-Resistance (RDS(on)) - N-Channel — 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max — 50 mOhm
RoHS Compliance — Compliant

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