IRF7416TRPBF vs IRF7306TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7416TRPBF disebabkan oleh Infineon dan IRF7306TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7416TRPBF IRF7306TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type P-Channel —
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (Generation V)
Drain-to-Source Voltage (VDS) -30 V -30 V
Continuous Drain Current (ID) at TA=25C -10 A —
Pulsed Drain Current (IDM) -50 A —
Static Drain-to-Source On-Resistance (RDS(on)) max 20 mOhm at VGS = -10 V —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) -1 V to -3 V —
Total Gate Charge (Qg) 61 nC —
Power Dissipation (PD) max at TA=25C 2.5 W —
Thermal Resistance, Junction-to-Ambient (RthJA) 50 C/W —
Gambaran Suhu Hubungan Operasi -55 C to +150 C —
Kemasan 8-SO (SOIC-8) 8-SOIC (SO-8, 0.154 inch / 3.90 mm body width)
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant —
Lead-Free Yes —
Aras MSL 1 (unlimited) 1 (per JEDEC J-STD-020)
Polarity — P-Channel (dual)
Number of Channels — 2 (independent, in single package)
Continuous Drain Current (ID) — -3.6 A at 25°C
On-Resistance RDS(on) max — 100 mOhm at VGS = -10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg — [DATA_NEEDED: Qg total]
Maximum Power Dissipation — 2 W at TA = 25°C
Gambaran Suhu Operasi — -55°C to +150°C (junction)
Packaging — Tape & Reel (TR)
RoHS Compliance — Yes (PBF suffix indicates Pb-free)
Qualification — Consumer market qualification standards (per IR/Infineon datasheet)
Avalanche Rated — Yes (ruggedized device per datasheet)

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