IRF7815TRPBF vs IRFR4615TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7815TRPBF disebabkan oleh Infineon dan IRFR4615TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7815TRPBF | IRFR4615TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET | — |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Rds(on) Max at Vgs=10V | 43 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) Typ | 3.0 V | — |
| Total Gate Charge (Qg) Typ | 25 nC | — |
| Maximum Power Dissipation (Ta=25C) | 2.5 W | — |
| Gambaran Suhu Operasi | -55C to +150C (Tj) | -55C to +175C |
| Kemasan | SO-8 (8-SO) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | 1 | — |
| Status RoHS | Compliant (Pb-free) | — |
| Lead-Free | Yes | — |
| Configuration | Single | — |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| Tenaga Gesa tunggal padek | — | 109 mJ |