IRF7815TRPBF vs IRFR4615TRLPBF 比較
詳細並排比較 IRF7815TRPBF 由 Infineon 與 IRFR4615TRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7815TRPBF | IRFR4615TRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET | — |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (N-Channel Enhancement Mode) |
| Drain-to-Source Voltage (Vdss) | 150 V | — |
| Continuous Drain Current (Id) at Ta=25C | 5.1 A | — |
| Rds(on) Max at Vgs=10V | 43 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) Typ | 3.0 V | — |
| Total Gate Charge (Qg) Typ | 25 nC | — |
| Maximum Power Dissipation (Ta=25C) | 2.5 W | — |
| 工作溫度範圍 | -55C to +150C (Tj) | -55C to +175C |
| 封裝 | SO-8 (8-SO) | TO-252AA (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant (Pb-free) | — |
| Lead-Free | Yes | — |
| Configuration | Single | — |
| Avalanche Rated | Yes | — |
| Drain-Source Voltage (VDS) | — | 150 V |
| Continuous Drain Current (ID) at TC=25C | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max] |
| On-Resistance RDS(on) max at VGS=10V | — | 42 mOhm |
| Total Gate Charge (Qg) | — | 26 nC |
| Gate-Source Charge (Qgs) | — | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Power Dissipation (PD) at TC=25C | — | 144 W |
| Avalanche Energy (EAS) | — | 109 mJ |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates Pb-free) |
| 單脈衝突崩能量 | — | 109 mJ |