IRF7854TRPBF vs IRFS3006TRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7854TRPBF disebabkan oleh Infineon dan IRFS3006TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF7854TRPBF | IRFS3006TRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | $0.48 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at Ta=25°C | 10 A | — |
| Power Dissipation (PD) at Ta=25°C | 2.5 W | — |
| On-Resistance RDS(on) max at VGS=10V | 13.4 mΩ | — |
| Gate-Source Threshold Voltage VGS(th) max | 4.9 V | — |
| Total Gate Charge Qg | 27 nC | — |
| Kemasan | SO-8 | D2PAK (TO-263AB), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (planar N-channel) | IR HEXFET (Planar DMOS) |
| Gambaran Suhu Operasi | -55°C to +150°C (TJ) | — |
| Lead-Free / RoHS | Yes (PBF suffix, lead-free) | — |
| Qualification | JEDEC industrial, Normal level | — |
| Solder Process | Reflow and wave-solderable | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Drain-Source Voltage (Vds) | — | 60 V |
| Continuous Drain Current (Id) at Tc=25C | — | 195 A |
| Pulsed Drain Current (Idm) | — | 270 A |
| On-Resistance Rds(on) max at Vgs=10V | — | 2.5 mOhm |
| Gate-Source Threshold Vgs(th) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 200 nC |
| Gate-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd value] |
| Power Dissipation (Pd) at Tc=25C | — | 375 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value] |
| RoHS Compliance | — | Lead-Free (Pb-Free), RoHS Compliant |
| Aras MSL | — | 1 |
| Avalanche Energy Rating | — | Avalanche rated (per Infineon datasheet) |