IRF7854TRPBF vs ISA150233C03LMDSXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7854TRPBF disebabkan oleh Infineon dan ISA150233C03LMDSXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF7854TRPBF ISA150233C03LMDSXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $0.48 —
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (ID) at Ta=25°C 10 A —
Power Dissipation (PD) at Ta=25°C 2.5 W —
On-Resistance RDS(on) max at VGS=10V 13.4 mΩ —
Gate-Source Threshold Voltage VGS(th) max 4.9 V —
Total Gate Charge Qg 27 nC —
Kemasan SO-8 PG-DSO-8-920 (SO-8 with thermal pad)
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET (planar N-channel) OptiMOS 3 trench MOSFET
Gambaran Suhu Operasi -55°C to +150°C (TJ) -55 C to +150 C (junction)
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Qualification JEDEC industrial, Normal level —
Solder Process Reflow and wave-solderable —
Gate Drive Voltage (recommended) 10 V —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
Configuration — Dual N-channel + P-channel (1 N + 1 P)
N-channel Continuous Drain Current (Ta) — 7.6 A
N-channel Continuous Drain Current (Tc) — 10.2 A
P-channel Continuous Drain Current (Ta) — 6.6 A
P-channel Continuous Drain Current (Tc) — 8.8 A
Total Power Dissipation (Ta) — 1.4 W
Total Power Dissipation (Tc) — 2.5 W
Marking Code — 1523C03L
Channel Type — N-channel + P-channel enhancement mode
Status RoHS — Compliant

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