IRFB4020PBF vs IRFP3710PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4020PBF disebabkan oleh Infineon dan IRFP3710PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFB4020PBF | IRFP3710PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| Suhu Hubungan Operasi | 175 C (max) | — |
| Kemasan | TO-220AB (through-hole) | TO-247AC (3-pin + tab) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Series | — | HEXFET, Fifth Generation |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 57 A (Tc) |
| Power Dissipation (PD) | — | 200 W (Tc) |
| On-Resistance RDS(on) Max | — | 25 mOhm at VGS = 10 V |
| Gate Charge (Qg) Typical | — | 66.7 nC |
| Gate-to-Source Voltage Max | — | ±20 V |
| Gambaran Suhu Operasi | — | -55C to +175C (Tj) |
| Avalanche Rating | — | Fully Avalanche Rated |
| dv/dt Rating | — | Dynamic dv/dt Rated |
| Lead-Free | — | Yes |
| Status RoHS | — | Compliant |