IRFB4020PBF vs IRFP3710PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4020PBF sa pamamagitan ng Infineon at IRFP3710PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFB4020PBF | IRFP3710PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| Temperature ng Junction na Operasyon | 175 C (max) | — |
| Packhaging | TO-220AB (through-hole) | TO-247AC (3-pin + tab) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Bilang ng Pin | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Series | — | HEXFET, Fifth Generation |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 57 A (Tc) |
| Power Dissipation (PD) | — | 200 W (Tc) |
| On-Resistance RDS(on) Max | — | 25 mOhm at VGS = 10 V |
| Gate Charge (Qg) Typical | — | 66.7 nC |
| Gate-to-Source Voltage Max | — | ±20 V |
| Hanay ng Temperature na Operasyon | — | -55C to +175C (Tj) |
| Avalanche Rating | — | Fully Avalanche Rated |
| dv/dt Rating | — | Dynamic dv/dt Rated |
| Lead-Free | — | Yes |
| Tindminan RoHS | — | Compliant |