IRFB4110PBF vs IRF1010EPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4110PBF disebabkan oleh Infineon dan IRF1010EPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFB4110PBF | IRF1010EPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| Suhu Hubungan Operasi | -55 °C to +175 °C | — |
| Kemasan | TO-220AB (through-hole) | TO-220AB |
| Technology | HEXFET (planar DMOS) | HEXFET Power MOSFET |
| Jenis Pemasangan | Through Hole | Through Hole |
| Status RoHS | Compliant (Pb-free suffix) | RoHS3 Compliant |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) | — | 84 A at Tc |
| Power Dissipation (PD) | — | 200 W at Tc |
| On-Resistance (RDS(on)) | — | 12 mOhm |
| Total Gate Charge (Qg) | — | 86.6 nC |
| Configuration | — | Single FET |
| Aras MSL | — | 3 (168 Hours) |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Rise Time / Fall Time | — | [DATA_NEEDED: switching times] |
| Thermal Resistance (RthJC) | — | [DATA_NEEDED: thermal resistance junction to case] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |