IRFB7545PBF vs IRF1310NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7545PBF disebabkan oleh Infineon dan IRF1310NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB7545PBF IRF1310NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRFB7545PBF —
Technology StrongIRFET™ (HEXFET, N-Channel) IR MOSFET (HEXFET)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-220AB (Through-Hole) D2PAK (TO-263AB)
Jenis Pemasangan Through Hole (THT) Surface Mount
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) Yes (PBF suffix)
Aras MSL N/A (Through-Hole) —
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25C — 42 A
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 73.3 nC
Power Dissipation (PD) at TC=25C — 160 W
Power Dissipation (PD) at TA=25C — 3.8 W
Gambaran Suhu Operasi — -55C to +175C
Built-in Diode — Yes (intrinsic body diode)
Configuration — Single with built-in diode

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