IRFB7545PBF vs IRF1310NSTRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB7545PBF sa pamamagitan ng Infineon at IRF1310NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFB7545PBF | IRF1310NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRFB7545PBF | — |
| Technology | StrongIRFET™ (HEXFET, N-Channel) | IR MOSFET (HEXFET) |
| Polarity | N-Channel | — |
| VDS (Drain-Source Voltage) max | 60 V | — |
| VGS (Gate-Source Voltage) max | ±20 V | — |
| RDS(on) max at VGS=10V | 5.9 mOhm | — |
| Continuous Drain Current (ID) at Tc=25C | 95 A | — |
| Pulsed Drain Current (IDM) | 380 A | [DATA_NEEDED: pulsed drain current] |
| Single-Pulse Avalanche Current (IAS) | 57 A | — |
| Power Dissipation (PD) at Tc=25C | 125 W | — |
| Thermal Resistance Junction-to-Case (RthJC) | 1.0 C/W | — |
| Temperature ng Junction na Operasyon | -55C to +175C | — |
| Packhaging | TO-220AB (Through-Hole) | D2PAK (TO-263AB) |
| Uri ng Pagpapasok | Through Hole (THT) | Surface Mount |
| Lead-Free / RoHS | Yes (Lead-Free, PBF suffix) | Yes (PBF suffix) |
| Level ng MSL | N/A (Through-Hole) | — |
| Gate Drive Voltage (typical) | 10 V | — |
| Avalanche Energy Rated | Yes | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Configuration | — | Single with built-in diode |