IRFH5015TRPBF vs IRFB7545PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5015TRPBF disebabkan oleh Infineon dan IRFB7545PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH5015TRPBF | IRFB7545PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | StrongIRFET™ (HEXFET, N-Channel) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| Kemasan | 8-PQFN (5x6) SuperSO8 | TO-220AB (Through-Hole) |
| Jenis Pemasangan | Surface Mount | Through Hole (THT) |
| Configuration | Single with built-in body diode | — |
| Suhu Operasi | -55C to +150C (TJ max) | — |
| Status RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IRFB7545PBF |
| Polarity | — | N-Channel |
| VDS (Drain-Source Voltage) max | — | 60 V |
| VGS (Gate-Source Voltage) max | — | ±20 V |
| RDS(on) max at VGS=10V | — | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | — | 95 A |
| Pulsed Drain Current (IDM) | — | 380 A |
| Single-Pulse Avalanche Current (IAS) | — | 57 A |
| Power Dissipation (PD) at Tc=25C | — | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | 1.0 C/W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes (Lead-Free, PBF suffix) |
| Aras MSL | — | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | — | 10 V |
| Avalanche Energy Rated | — | Yes |