IRFH5015TRPBF vs IRFB7545PBF Comparison
Detailed side-by-side comparison of IRFH5015TRPBF by Infineon and IRFB7545PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFH5015TRPBF
IRFH5015TRPBF - 150V N-Ch 31mOhm HEXFET MOSFET | Infineon
IRFH5015TRPBF β Active
Specification Comparison
| Parameter | IRFH5015TRPBF | IRFB7545PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.62 | $0.95 |
| FET Type | N-Channel | β |
| Technology | IR MOSFET (HEXFET) | StrongIRFETβ’ (HEXFET, N-Channel) |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at TA=25C | 10 A | β |
| Continuous Drain Current (ID) at TC=25C | 56 A | β |
| On-Resistance (RDS(on)) max | 31 mOhm | β |
| Total Gate Charge (Qg) | 33 nC | β |
| Power Dissipation (TA=25C) | 3.6 W | β |
| Power Dissipation (TC=25C) | 156 W | β |
| Gate Drive Voltage (VGS recommended) | 10 V | β |
| Package | 8-PQFN (5x6) SuperSO8 | TO-220AB (Through-Hole) |
| Mounting Type | Surface Mount | Through Hole (THT) |
| Configuration | Single with built-in body diode | β |
| Operating Temperature | -55C to +150C (TJ max) | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | IRFB7545PBF |
| Polarity | β | N-Channel |
| VDS (Drain-Source Voltage) max | β | 60 V |
| VGS (Gate-Source Voltage) max | β | Β±20 V |
| RDS(on) max at VGS=10V | β | 5.9 mOhm |
| Continuous Drain Current (ID) at Tc=25C | β | 95 A |
| Pulsed Drain Current (IDM) | β | 380 A |
| Single-Pulse Avalanche Current (IAS) | β | 57 A |
| Power Dissipation (PD) at Tc=25C | β | 125 W |
| Thermal Resistance Junction-to-Case (RthJC) | β | 1.0 C/W |
| Operating Junction Temperature | β | -55C to +175C |
| Lead-Free / RoHS | β | Yes (Lead-Free, PBF suffix) |
| MSL Level | β | N/A (Through-Hole) |
| Gate Drive Voltage (typical) | β | 10 V |
| Avalanche Energy Rated | β | Yes |