IRFH8201TRPBF vs BSC014N04LSATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH8201TRPBF disebabkan oleh Infineon dan BSC014N04LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFH8201TRPBF | BSC014N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | StrongIRFET (trench MOSFET) | Trench (OptiMOS 5, thin-wafer) |
| Drain-Source Voltage (VDS) | 25 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 49 A | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | 324 A | — |
| RDS(on) max at VGS=10V | 0.95 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 1.35 V max | — |
| Total Gate Charge (Qg) | 56 nC at VGS=10V | — |
| Output Capacitance (Coss) | 7.33 nF | — |
| Reverse Transfer Capacitance (Crss) | 850 pF | — |
| Power Dissipation (TA) | 3.6 W | — |
| Power Dissipation (TC) | 156 W | — |
| Gambaran Suhu Operasi | -55C to +150C | -55C to +175C |
| Kemasan | SuperSO8 5x6 (PQFN-8) with exposed pad | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL level] | 1 (unlimited) |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |