IRFH8201TRPBF vs IRFH8318TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH8201TRPBF disebabkan oleh Infineon dan IRFH8318TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH8201TRPBF IRFH8318TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology StrongIRFET (trench MOSFET) StrongIRFET™ (N-Channel Trench MOSFET)
Drain-Source Voltage (VDS) 25 V 30 V
Continuous Drain Current (ID) at TA=25C 49 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) 324 A —
RDS(on) max at VGS=10V 0.95 mOhm —
Gate Threshold Voltage (VGS(th)) 1.35 V max —
Total Gate Charge (Qg) 56 nC at VGS=10V 41 nC
Output Capacitance (Coss) 7.33 nF —
Reverse Transfer Capacitance (Crss) 850 pF —
Power Dissipation (TA) 3.6 W —
Power Dissipation (TC) 156 W —
Gambaran Suhu Operasi -55C to +150C —
Kemasan SuperSO8 5x6 (PQFN-8) with exposed pad PQFN 5x6 (SuperSO8, 8-PowerTDFN)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] 1
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — IRFH8318TRPBF
Continuous Drain Current (ID) at Ta=25°C — 27 A
Continuous Drain Current (ID) at Tc=25°C — 120 A
On-Resistance RDS(on) max at VGS=10V — 3.1 mΩ
Power Dissipation (Ta) — 3.6 W
Power Dissipation (Tc) — 59 W
Suhu Operasi — -55°C to +150°C
Lead-Free — Yes
Description — Synchronous MOSFET for high-frequency buck converters

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