IRFP250MPBF vs IRFP250NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP250MPBF disebabkan oleh Infineon dan IRFP250NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFP250MPBF IRFP250NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) $2.55 —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFP250MPBF —
Jenis Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) N-Channel HEXFET Power MOSFET (Fifth Generation)
Drain-Source Voltage (Vds) 200 V —
Continuous Drain Current (Id) at Tc=25C 30 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Static Drain-Source On-Resistance (RDS(on)) 75 mOhm max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 4 V (typ) —
Total Gate Charge (Qg) 82 nC —
Power Dissipation (Pd) at Tc=25C 214 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan / Case TO-247AC (3-pin + tab) —
Jenis Pemasangan Through Hole Through Hole
Bilangan Pin 3 —
Avalanche Rated Yes —
Status RoHS Compliant Compliant
Lead-Free Yes —
Aras MSL 1 (unlimited) —
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC — 30 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (PD) at TC — 214 W
On-Resistance RDS(on) — [DATA_NEEDED: typical RDS(on) at VGS=10V]
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: VGS(th) typical/range]
Kemasan — TO-247AC (through-hole)
Gambaran Suhu Operasi — -55 C to +175 C (TJ)
Avalanche Energy Rating — Fully avalanche rated
dv/dt Rating — Dynamic dv/dt rated
Switching Frequency Optimization — Optimized for applications below 100 kHz
Qualification Standard — JEDEC
Lead-Free Status — Yes (PBF suffix)
Planar Cell Structure — Yes (wide SOA)

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