IRFP250MPBF vs IRFP250NPBF 比較
詳細並排比較 IRFP250MPBF 由 Infineon 與 IRFP250NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFP250MPBF | IRFP250NPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $2.55 | — |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRFP250MPBF | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET) | N-Channel HEXFET Power MOSFET (Fifth Generation) |
| Drain-Source Voltage (Vds) | 200 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Static Drain-Source On-Resistance (RDS(on)) | 75 mOhm max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 4 V (typ) | — |
| Total Gate Charge (Qg) | 82 nC | — |
| Power Dissipation (Pd) at Tc=25C | 214 W | — |
| 工作接面溫度 | -55C to +175C | — |
| 封裝 / 外殼 | TO-247AC (3-pin + tab) | — |
| 安裝類型 | Through Hole | Through Hole |
| 腳位數 | 3 | — |
| Avalanche Rated | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等級 | 1 (unlimited) | — |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 30 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (PD) at TC | — | 214 W |
| On-Resistance RDS(on) | — | [DATA_NEEDED: typical RDS(on) at VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/range] |
| 封裝 | — | TO-247AC (through-hole) |
| 工作溫度範圍 | — | -55 C to +175 C (TJ) |
| Avalanche Energy Rating | — | Fully avalanche rated |
| dv/dt Rating | — | Dynamic dv/dt rated |
| Switching Frequency Optimization | — | Optimized for applications below 100 kHz |
| Qualification Standard | — | JEDEC |
| Lead-Free Status | — | Yes (PBF suffix) |
| Planar Cell Structure | — | Yes (wide SOA) |