IRFP3710PBF vs IRFB4020PBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP3710PBF disebabkan oleh Infineon dan IRFB4020PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFP3710PBF | IRFB4020PBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Series | HEXFET, Fifth Generation | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 57 A (Tc) | — |
| Power Dissipation (PD) | 200 W (Tc) | — |
| On-Resistance RDS(on) Max | 25 mOhm at VGS = 10 V | — |
| Gate Charge (Qg) Typical | 66.7 nC | — |
| Gate-to-Source Voltage Max | ±20 V | — |
| Gambaran Suhu Operasi | -55C to +175C (Tj) | — |
| Kemasan | TO-247AC (3-pin + tab) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Avalanche Rating | Fully Avalanche Rated | — |
| dv/dt Rating | Dynamic dv/dt Rated | — |
| Lead-Free | Yes | — |
| Status RoHS | Compliant | — |
| Technology | IR MOSFET (HEXFET) | IR MOSFET (HEXFET) |
| Drain-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC | — | 18 A |
| Power Dissipation (PD) at TC | — | 100 W |
| RDS(on) Maximum | — | 100 mOhm |
| Gate-Source Voltage (VGS) Maximum | — | 20 V |
| Thermal Resistance, Junction-to-Case (RthJC) | — | 1.43 C/W |
| Suhu Hubungan Operasi | — | 175 C (max) |
| Kiraan Pin | — | 3 (Gate, Drain, Source) |
| Lead-Free (PbF suffix) | — | Yes |
| Market Qualification | — | Consumer |
| Recommended Use | — | Class-D audio amplifier and high-efficiency switching applications |