IRFR120NTRPBF vs IRFR9120NTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR120NTRPBF disebabkan oleh Infineon dan IRFR9120NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR120NTRPBF | IRFR9120NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | -6.6 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | — |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | — |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | — |
| Total Gate Charge (Qg) typical | 16.7 nC | — |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | — |
| Gambaran Suhu Hubungan Operasi | -55C to +175C | -55C to +175C |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | HEXFET (IR MOSFET fifth generation) | HEXFET fifth-generation IR MOSFET |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | — |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | — |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | — |
| Polarity | — | P-Channel |
| Drain-Source Voltage (VDS) | — | -100 V |
| On-Resistance (RDS(on)) max at VGS=-10V | — | 480 milliohm |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 18 nC (typical) |
| Continuous Power Dissipation (PD) at TC=25C | — | 40 W |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Aras MSL | — | 1 (unlimited floor life) |
| Lead Finish / Plating | — | Pb-free (PBF suffix), Matte Tin |
| Status RoHS | — | Compliant |
| Moisture Sensitivity | — | MSL1 per JEDEC J-STD-020 |