IRFR220NPBF vs IRFR2405TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NPBF disebabkan oleh Infineon dan IRFR2405TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR220NPBF IRFR2405TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25C 5 A —
Power Dissipation (PD) at TC=25C 43 W —
Static Drain-Source On-Resistance (RDS(on)) max 0.6 ohm at VGS = 10 V —
Jenis Pemasangan Surface Mount Surface Mount
Kemasan / Case TO-252AA (DPAK) —
Technology HEXFET (Planar) HEXFET (IR MOSFET)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] 70 nC
Gambaran Suhu Operasi -55C to +150C (junction) —
Lead-Free / RoHS Yes, lead-free (PBF suffix) —
Avalanche Energy Rated Yes (per datasheet characterization) —
Kiraan Pin 3 (Gate, Drain, Source) plus tab 3 (Gate, Drain, Source) + Tab
Aras MSL 1 (per JEDEC J-STD-020) 1
Manufacturer — Infineon Technologies
Part Status — Active
Drain-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 56 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubungan Operasi — -55C to +175C
Kemasan — TO-252AA (DPAK)
Status RoHS — Compliant (Lead-Free PBF suffix)
Boson Bebas — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

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