IRFR220NPBF vs IRFR2405TRPBF 比較
詳細並排比較 IRFR220NPBF 由 Infineon 與 IRFR2405TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFR220NPBF | IRFR2405TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25C | 5 A | — |
| Power Dissipation (PD) at TC=25C | 43 W | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 / 外殼 | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET (IR MOSFET) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 70 nC |
| 工作溫度範圍 | -55C to +150C (junction) | — |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | — |
| Avalanche Energy Rated | Yes (per datasheet characterization) | — |
| 腳位數 | 3 (Gate, Drain, Source) plus tab | 3 (Gate, Drain, Source) + Tab |
| MSL 等級 | 1 (per JEDEC J-STD-020) | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Status | — | Active |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 56 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| On-Resistance RDS(on) max at VGS=10V | — | 16 mOhm |
| On-Resistance RDS(on) max at VGS=5V | — | [DATA_NEEDED: RDS(on) at 5V] |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| 工作接面溫度 | — | -55C to +175C |
| 封裝 | — | TO-252AA (DPAK) |
| RoHS 狀態 | — | Compliant (Lead-Free PBF suffix) |
| 無鹵素 | — | [DATA_NEEDED: halogen-free status] |
| Avalanche Rated | — | Yes (100% avalanche tested) |