IRFR4105TRPBF vs IPD30N06S215ATMA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR4105TRPBF disebabkan oleh Infineon dan IPD30N06S215ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR4105TRPBF | IPD30N06S215ATMA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | N-Channel Enhancement Mode |
| Technology | HEXFET (5th generation IR MOSFET) | — |
| Drain-Source Voltage (V_DS max) | 55 V | — |
| Continuous Drain Current (I_D at Tc) | 27 A | — |
| On-Resistance (R_DS(on) max at V_GS=10V) | 45 milliohm | — |
| Gate-Source Voltage (V_GS max) | 20 V | — |
| Total Gate Charge (Q_G) | 22.7 nC | — |
| Power Dissipation (P_D at Tc) | 68 W | — |
| Kemasan | TO-252AA (DPAK) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Gate Threshold Voltage (V_GS(th) typ) | [DATA_NEEDED: V_GS(th) typical value] | — |
| Status RoHS | Compliant (lead-free, PBF suffix) | — |
| Packaging Type | Tape and Reel (TRPBF) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | MSL1 (up to 260 C peak reflow) |
| Avalanche Energy (E_AS) | [DATA_NEEDED: E_AS rating] | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS Power MOSFET |
| Drain-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID, Tc) | — | 30 A |
| Power Dissipation (PD, Tc) | — | 136 W |
| Kemasan / Case | — | PG-TO252-3-11 (DPAK) - 3-Pin (2+Tab) |
| Suhu Operasi | — | -55 C to +175 C (junction) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100% avalanche tested |
| Lead-Free / RoHS | — | Green package (lead free), RoHS compliant |
| Gate Threshold Type | — | Logic-level compatible |
| Packing | — | Tape & Reel (T/R) |