IRFR5410TRPBF vs IRFR1205TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5410TRPBF disebabkan oleh Infineon dan IRFR1205TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR5410TRPBF | IRFR1205TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | 55 V |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | +/- 20 V |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK) |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (TJ) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (IR MOSFET, 5th generation) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 44 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Gate Threshold Voltage (VGS(th)) | — | 2 V min, 4 V max |
| On-Resistance RDS(on) at VGS=10V | — | 27 mOhm max |
| Total Gate Charge (Qg) | — | 43.3 nC |
| Power Dissition (PD) at TC=25C | — | 107 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Status RoHS | — | Compliant (PBF suffix = lead-free) |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen status] |