IRFR5410TRPBF vs IRFR1205TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5410TRPBF sa pamamagitan ng Infineon at IRFR1205TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR5410TRPBF IRFR1205TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V 55 V
Continuous Drain Current (ID) at TC = 25 °C -13 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V 205 mΩ —
Gate-Source Voltage (VGS) max ±20 V +/- 20 V
Total Gate Charge (Qg) typ 70 nC —
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Power Dissition (PD) at TC = 25 °C 66 W —
Hanay ng Temperature na Operasyon -55 °C to +150 °C (TJ) —
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (advanced process, Gen 5) HEXFET (IR MOSFET, 5th generation)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Status Lead-free, RoHS compliant (PBF suffix) —
Level ng MSL [DATA_NEEDED: MSL rating] —
RDS(on) Test Conditions VGS = -10 V, ID = -7.0 A —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 44 A
Pulsed Drain Current (IDM) — 160 A
Gate Threshold Voltage (VGS(th)) — 2 V min, 4 V max
On-Resistance RDS(on) at VGS=10V — 27 mOhm max
Total Gate Charge (Qg) — 43.3 nC
Power Dissition (PD) at TC=25C — 107 W
Temperature ng Junction na Operasyon — -55C to +175C
Tindminan RoHS — Compliant (PBF suffix = lead-free)
Lead-Free / Halogen-Free — Yes / [DATA_NEEDED: halogen status]

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