IRFR5410TRPBF vs IRLR2905TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5410TRPBF disebabkan oleh Infineon dan IRLR2905TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR5410TRPBF | IRLR2905TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -100 V | — |
| Continuous Drain Current (ID) at TC = 25 °C | -13 A | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS = -10 V | 205 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Total Gate Charge (Qg) typ | 70 nC | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Power Dissition (PD) at TC = 25 °C | 66 W | — |
| Gambaran Suhu Operasi | -55 °C to +150 °C (TJ) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (advanced process, Gen 5) | HEXFET (IR MOSFET, fifth generation) |
| Avalanche Rated | Yes (fully avalanche rated) | Yes |
| Lead-Free / RoHS Status | Lead-free, RoHS compliant (PBF suffix) | — |
| Aras MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RDS(on) Test Conditions | VGS = -10 V, ID = -7.0 A | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Lead-Free / RoHS | — | Yes / Compliant |
| Gate Drive | — | Logic-level compatible |