IRFZ44NPBF vs IRF5210PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFZ44NPBF disebabkan oleh Infineon dan IRF5210PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFZ44NPBF IRF5210PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 49 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max +/- 20 V —
Static Drain-Source On-Resistance (RDS(on)) at VGS=10V 17.5 mOhm —
Total Gate Charge (Qg) 42 nC 120 nC
Power Dissipation (PD) at Tc=25C 94 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Thermal Resistance Junction-to-Ambient (RthJA) 62 C/W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-220AB (3-pin + tab) TO-220AB (through-hole)
Jenis Pemasangan Through Hole Through Hole
Technology HEXFET (Advanced Process) HEXFET (Fifth Generation)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS rating] —
Status RoHS Compliant —
Jenis Transistor — P-Channel MOSFET
Drain-Source Voltage (Vds) — -100 V
Continuous Drain Current (Id) at Tc — -40 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Gate-Source Threshold Voltage (Vgs(th)) — -2 V to -4 V (typical -2 V)
On-Resistance Rds(on) at Vgs=-10V — 60 milliohms
Power Dissipation (Pd) at Tc — 200 W
Gambaran Suhu Operasi — -55 C to +175 C (junction)
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Tab Connection — Electrically tied to Drain
Pin Configuration — Gate / Drain (tab) / Source (G-D-S, front view)

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