IRLB4132PBF vs IRLL024ZTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB4132PBF disebabkan oleh Infineon dan IRLL024ZTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLB4132PBF IRLL024ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Jenis Transistor N-Channel MOSFET (HEXFET) —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID, Tc=25C) 78 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Maximum Power Dissipation (PD, Tc=25C) 140 W —
On-Resistance (RDS(on), VGS=10V) 3.5 mOhm (typical) —
On-Resistance (RDS(on), VGS=4.5V) [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th), typical) 1.0 V to 2.5 V —
Gate Charge (Qg, typical) [DATA_NEEDED: total gate charge] —
Maximum Junction Temperature 175 C —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan / Case TO-220AB (through-hole, 3 leads) —
Jenis Pemasangan Through Hole Surface Mount
Lead-Free / RoHS Yes (Pb-free PBF suffix) —
AEC-Q101 Automotive Qualification Not qualified (industrial/commercial) —
Technology — HEXFET Power MOSFET (trench-gate)
FET Type — N-Channel enhancement-mode
Drain-Source Voltage (VDS) max — 55 V
Gate-Source Voltage (VGS) max — ±16 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 60 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO)
Total Gate Charge (Qg) typical — 7 nC
Power Dissipation (PD) at TA=25°C — 1 W
Operating Junction Temperature (TJ) — -55 °C to +150 °C
Kemasan — SOT-223 (TO-261-4)
Aras MSL — 1 (unlimited floor life)
Status RoHS — Compliant

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