IRLB8748PBF vs IRF5305PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB8748PBF disebabkan oleh Infineon dan IRF5305PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLB8748PBF IRF5305PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 92 A -31 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical 42 nC (typical)
Power Dissipation (PD) at TC=25C 75 W —
Gambaran Suhu Operasi -55C to +175C (junction) —
Package Type TO-220AB through-hole —
Jenis Pemasangan Through Hole Through Hole
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
Status RoHS Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -55 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
Suhu Hubungan Operasi — -55C to +175C
Kemasan — TO-220AB (through-hole, 3-pin + tab)
Lead-Free Plating (PBF suffix) — Yes (Pb-free)
Technology — HEXFET (planar DMOS)

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