IRLB8748PBF vs IRF5305PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLB8748PBF sa pamamagitan ng Infineon at IRF5305PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLB8748PBF | IRF5305PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 92 A | -31 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | 42 nC (typical) |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Package Type | TO-220AB through-hole | — |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | — |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| Tindminan RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Qualification Standard | JEDEC (Industrial market per datasheet) | — |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissition (PD) at TC=25C | — | 110 W |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V | — | 60 mOhm (typical) |
| Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A | — | [DATA_NEEDED: max RDS(on) at -10V] |
| Gate-to-Drain Charge (Qgd) | — | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Turn-On Delay Time (td(on)) | — | [DATA_NEEDED: td(on)] |
| Turn-Off Delay Time (td(off)) | — | [DATA_NEEDED: td(off)] |
| Thermal Resistance, Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC] |
| Thermal Resistance, Junction-to-Ambient (RthJA) | — | [DATA_NEEDED: RthJA] |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Packhaging | — | TO-220AB (through-hole, 3-pin + tab) |
| Lead-Free Plating (PBF suffix) | — | Yes (Pb-free) |
| Technology | — | HEXFET (planar DMOS) |