IRLB8748PBF vs IRF5305PBF 比較

詳細並排比較 IRLB8748PBF 由 Infineon 與 IRF5305PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRLB8748PBF IRF5305PBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 92 A -31 A
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] [DATA_NEEDED: ID at TC=100C]
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical 42 nC (typical)
Power Dissipation (PD) at TC=25C 75 W —
工作溫度範圍 -55C to +175C (junction) —
Package Type TO-220AB through-hole —
安裝類型 Through Hole Through Hole
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
RoHS 狀態 Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) —
FET Type — P-Channel
Drain-to-Source Voltage (VDS) — -55 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at TC=25C — 110 W
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V — 60 mOhm (typical)
Static Drain-to-Source On-Resistance (RDS(on)) at VGS=-10V ID=-16A — [DATA_NEEDED: max RDS(on) at -10V]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Turn-On Delay Time (td(on)) — [DATA_NEEDED: td(on)]
Turn-Off Delay Time (td(off)) — [DATA_NEEDED: td(off)]
Thermal Resistance, Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC]
Thermal Resistance, Junction-to-Ambient (RthJA) — [DATA_NEEDED: RthJA]
工作接面溫度 — -55C to +175C
封裝 — TO-220AB (through-hole, 3-pin + tab)
Lead-Free Plating (PBF suffix) — Yes (Pb-free)
Technology — HEXFET (planar DMOS)

資料表與資源

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