IRLB8748PBF vs IRLB8721 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB8748PBF disebabkan oleh Infineon dan IRLB8721 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRLB8721 IRLB8721 - 30V 62A 8.7mOhm MOSFET | Infineon

IRLB8721 - 30V 62A 8.7mOhm MOSFET | Infineon

IRLB8721 ✓ Aktif

Pengandingan Spesifikasi

Parametr IRLB8748PBF IRLB8721
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 92 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical —
Power Dissipation (PD) at TC=25C 75 W —
Gambaran Suhu Operasi -55C to +175C (junction) —
Package Type TO-220AB through-hole —
Jenis Pemasangan Through Hole Through-hole
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel N-channel
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
Status RoHS Compliant (Pb-free PBF suffix) —
Qualification Standard JEDEC (Industrial market per datasheet) —
Drain-Source Voltage — 30 V maximum
Continuous Drain Current — 62 A at Tc
Drain-Source On-State Resistance — 8.7 mOhm maximum
Power Dissipation — 65 W at Tc
Tegangan Kepasaran-Sumber — +/-20 V maximum
Semua Kepemulangan Gerbang — 7.6 nC
Technology — StrongIRFET
Gate Drive Optimization — 5 V logic-level optimized
Kemasan — TO-220AB through-hole package
Device Classification — Power MOSFET
Qualification — JEDEC product qualification according to the supplied cross-reference data
Related Ordering Code — IRLB8721PBF
Manufacturer — Infineon Technologies
Manufacturer Product Page — Infineon IRLB8721
Maximum Drain Current Condition — Tc
Power Dissipation Condition — Tc

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