IRLB8748PBF vs IRLB8721 比較
詳細並排比較 IRLB8748PBF 由 Infineon 與 IRLB8721 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLB8748PBF | IRLB8721 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 92 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | — |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| 工作溫度範圍 | -55C to +175C (junction) | — |
| Package Type | TO-220AB through-hole | — |
| 安裝類型 | Through Hole | Through-hole |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | N-channel |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| RoHS 狀態 | Compliant (Pb-free PBF suffix) | — |
| Qualification Standard | JEDEC (Industrial market per datasheet) | — |
| Drain-Source Voltage | — | 30 V maximum |
| Continuous Drain Current | — | 62 A at Tc |
| Drain-Source On-State Resistance | — | 8.7 mOhm maximum |
| Power Dissipation | — | 65 W at Tc |
| 閘極-源極電壓 | — | +/-20 V maximum |
| 總閘極電荷 | — | 7.6 nC |
| Technology | — | StrongIRFET |
| Gate Drive Optimization | — | 5 V logic-level optimized |
| 封裝 | — | TO-220AB through-hole package |
| Device Classification | — | Power MOSFET |
| Qualification | — | JEDEC product qualification according to the supplied cross-reference data |
| Related Ordering Code | — | IRLB8721PBF |
| Manufacturer | — | Infineon Technologies |
| Manufacturer Product Page | — | Infineon IRLB8721 |
| Maximum Drain Current Condition | — | Tc |
| Power Dissipation Condition | — | Tc |