IRLML5103TRPBF vs BSS84PH6327XTSA2 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML5103TRPBF disebabkan oleh Infineon dan BSS84PH6327XTSA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML5103TRPBF | BSS84PH6327XTSA2 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | P-Channel MOSFET | — |
| Maximum Drain-Source Voltage | 30 V | — |
| Continuous Drain Current | 760 mA at Ta | — |
| Power Dissipation | 540 mW at Ta | — |
| Maximum On-Resistance | 600 mOhm | — |
| Gate Charge | 3.4 nC | — |
| Technology | IR MOSFET | — |
| Kemasan | Micro3/SOT-23 | PG-SOT23 (SOT-23-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Polarity | P-Channel | P-Channel Enhancement Mode |
| Drain-Source Voltage Rating | -30 V | — |
| Channel Mode | Enhancement | — |
| Suhu Operasi | 175 C | -55C to +150C |
| Status RoHS | Compliant | Compliant |
| Footprint | SOT-23 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS84PH6327XTSA2 |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| On-State Resistance (RDS(on)) max | — | 8 ohm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-to-Source Voltage (VGS) | — | +/-20 V |
| Qualification | — | AEC-Q101 (Automotive) |
| Technology Family | — | SIPMOS OptiMOS |
| Lead-Free | — | Yes |