IRLML5103TRPBF vs BSS84PH6327XTSA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML5103TRPBF sa pamamagitan ng Infineon at BSS84PH6327XTSA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML5103TRPBF | BSS84PH6327XTSA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | P-Channel MOSFET | — |
| Maximum Drain-Source Voltage | 30 V | — |
| Continuous Drain Current | 760 mA at Ta | — |
| Power Dissipation | 540 mW at Ta | — |
| Maximum On-Resistance | 600 mOhm | — |
| Gate Charge | 3.4 nC | — |
| Technology | IR MOSFET | — |
| Packhaging | Micro3/SOT-23 | PG-SOT23 (SOT-23-3) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Polarity | P-Channel | P-Channel Enhancement Mode |
| Drain-Source Voltage Rating | -30 V | — |
| Channel Mode | Enhancement | — |
| Temperature na Operasyon | 175 C | -55C to +150C |
| Tindminan RoHS | Compliant | Compliant |
| Footprint | SOT-23 | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSS84PH6327XTSA2 |
| FET Type | — | P-Channel |
| Drain-to-Source Voltage (VDS) | — | -60 V |
| Continuous Drain Current (ID) | — | -170 mA (Ta) |
| Power Dissipation (PD) | — | 360 mW (Ta) |
| On-State Resistance (RDS(on)) max | — | 8 ohm at VGS = -10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max values] |
| Gate-to-Source Voltage (VGS) | — | +/-20 V |
| Qualification | — | AEC-Q101 (Automotive) |
| Technology Family | — | SIPMOS OptiMOS |
| Lead-Free | — | Yes |