IRLR2705TRPBF vs IRLR2905TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR2705TRPBF disebabkan oleh Infineon dan IRLR2905TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR2705TRPBF | IRLR2905TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 28 A | 42 A |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C with 1in2 copper] | — |
| RDS(on) Max at VGS=10V | 40 mOhm | — |
| RDS(on) Max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute max, +/-V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic-Level (compatible with 4V drive) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 68 W | 110 W |
| Power Dissipation (PD) at TA=25C | [DATA_NEEDED: PD at TA=25C with 1in2 copper] | — |
| Suhu Hubungan Operasi | -55C to +175C | -55C to +175C |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET generation 5) | HEXFET (IR MOSFET, fifth generation) |
| Avalanche Rated | Yes | Yes |
| Lead-Free / RoHS | Yes (Pb-free, RoHS compliant) | Yes / Compliant |
| Aras MSL | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | [DATA_NEEDED: MSL rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Charge (Qg) | — | 32 nC |
| Gate Drive | — | Logic-level compatible |