IRLR2705TRPBF vs IRLR2905TRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLR2705TRPBF tarafından Infineon ve IRLR2905TRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLR2705TRPBF | IRLR2905TRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25C | 28 A | 42 A |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C with 1in2 copper] | — |
| RDS(on) Max at VGS=10V | 40 mOhm | — |
| RDS(on) Max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | — |
| Gate-to-Source Voltage (VGS) Max | [DATA_NEEDED: VGS absolute max, +/-V] | — |
| Gate Threshold Voltage (VGS(th)) | Logic-Level (compatible with 4V drive) | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 16.7 nC | — |
| Power Dissipation (PD) at Tc=25C | 68 W | 110 W |
| Power Dissipation (PD) at TA=25C | [DATA_NEEDED: PD at TA=25C with 1in2 copper] | — |
| İşletim Jant Sıcaklığı | -55C to +175C | -55C to +175C |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET generation 5) | HEXFET (IR MOSFET, fifth generation) |
| Avalanche Rated | Yes | Yes |
| Lead-Free / RoHS | Yes (Pb-free, RoHS compliant) | Yes / Compliant |
| MSL Seviyesi | [DATA_NEEDED: MSL rating per JEDEC J-STD-020] | [DATA_NEEDED: MSL rating] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Charge (Qg) | — | 32 nC |
| Gate Drive | — | Logic-level compatible |