IRLR2705TRPBF vs IRLR3410TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR2705TRPBF disebabkan oleh Infineon dan IRLR3410TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR2705TRPBF IRLR3410TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET, Metal Oxide N-Channel
Drain-to-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc=25C 28 A —
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C with 1in2 copper] —
RDS(on) Max at VGS=10V 40 mOhm —
RDS(on) Max at VGS=5V [DATA_NEEDED: RDS(on) at VGS=5V] —
Gate-to-Source Voltage (VGS) Max [DATA_NEEDED: VGS absolute max, +/-V] —
Gate Threshold Voltage (VGS(th)) Logic-Level (compatible with 4V drive) —
Total Gate Charge (Qg) 16.7 nC 22.7 nC
Power Dissipation (PD) at Tc=25C 68 W —
Power Dissipation (PD) at TA=25C [DATA_NEEDED: PD at TA=25C with 1in2 copper] —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET (IR MOSFET generation 5) HEXFET (IR MOSFET, 5th generation)
Avalanche Rated Yes —
Lead-Free / RoHS Yes (Pb-free, RoHS compliant) Yes (PBF suffix)
Aras MSL [DATA_NEEDED: MSL rating per JEDEC J-STD-020] 1 (unlimited floor life at <30C/85% RH)
Drain-Source Voltage (Vdss) — 100 V
Continuous Drain Current (Id) at Tc=25C — 17 A
Power Dissipation (Pd) at Tc=25C — 79 W
On-Resistance RDS(on) max — 105 mOhm
Gate Threshold Voltage Vgs(th) — Logic-level (drive ~4.5V)
Gambaran Suhu Operasi — -55C to +175C (junction)
Drain Tab Connection — Tab electrically tied to Drain
Polarity — N-Channel enhancement mode

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