IRLR3410TRLPBF vs IRLR3410TRRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRLPBF disebabkan oleh Infineon dan IRLR3410TRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR3410TRLPBF | IRLR3410TRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | — |
| Part Number | IRLR3410TRLPBF | — |
| Technology | HEXFET (5th generation) N-Channel MOSFET | IR HEXFET (IR MOSFET process) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | — |
| Pulsed Drain Current (IDM) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | — |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | — |
| Gate-Source Threshold VGS(th) typ | 2.0 V | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Gate Drive Level | Logic level (5V capable) | — |
| Power Dissipation (PD) at TC=25C | 79 W | — |
| Suhu Hubungan Operasi | -55C to +175C | — |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | — |
| Aras MSL | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (UIS tested) | Yes |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | — | 17 A |
| Power Dissipation (PD, Tc=25C) | — | 79 W |
| On-Resistance (RDS(on) max at VGS=10V) | — | 105 mOhm |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1 V (at 250 uA) |
| Packaging Style | — | Tape & Reel Right (TRR) |
| Gambaran Suhu Operasi | — | -55C to +175C (junction) |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |